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| SIPMOS(R) Small-Signal Transistor BSS 229 q q q q q q q VDS 250 V ID 0.07 A RDS(on) 100 N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1 G 2 D 3 S SS229 TO-92 BSS 229 Q62702-S600 E6296: 1500 pcs/reel; 2 reels/carton; source first Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 25 C Pulsed drain current, Max. power dissipation, Symbol Values 250 250 14 20 0.07 0.21 0.63 - 55 ... + 150 200 E 55/150/56 Unit V VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA - - A W C K/W - TA = 25 C TA = 25 C Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 04.97 BSS 229 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = - 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 250 V, VGS = - 3 V Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.014 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 0.07 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VDD = 30 V, VGS = - 2 V ... + 5 V, RGS = 50 , ID = 0.15 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = - 2 V ... + 5 V, RGS = 50 , ID = 0.15 A Values typ. max. Unit V(BR)DSS 250 - - 1.4 - - 0.7 V VGS(th) IDSS - 1.8 - - - - 10 75 100 200 100 nA A nA IGSS - RDS(on) - 100 gfs 0.05 0.10 85 6 2 4 10 10 15 - S pF - 120 10 3 6 15 13 20 ns Ciss Coss - Crss - td(on) tr td(off) tf - - - - Semiconductor Group 2 BSS 229 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Reverse Diode Continuous reverse drain current TA = 25 C Pulsed reverse drain current TA = 25 C Diode forward on-voltage IF = 0.14 A, VGS = 0 Symbol min. Values typ. max. A - - - 0.8 Unit V V V V V V V 0.07 0.21 V - Symbol Limit Values min. Range of VGS(th) Threshold voltage selected in groups: F G A B C D 1) Unit IS ISM - VSD 1.2 VGS(th) Grouping Test Condition - max. 0.15 - 1.385 - 1.485 - 1.585 - 1.685 - 1.785 - 1.885 VGS(th) VGS(th) - - 1.535 - 1.635 - 1.735 - 1.835 - 1.935 - 2.035 VDS1 = 0.2 V; VDS2 = 3 V; ID = 10 A 1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Semiconductor Group 3 BSS 229 Characteristics at Tj = 25 C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 C Typ. output characteristics ID = f (VDS) parameter: tp = 80 s Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS Semiconductor Group 4 BSS 229 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s, VDS 2 x ID x RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS 2 x ID x RDS(on)max., tp = 80 s Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.014 A, VGS = 0 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 5 BSS 229 Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 s, Tj, (spread) Drain current ID = f (TA) parameter: VGS 3 V Drain-source breakdown voltage V(BR) DSS = b x V(BR)DSS (25 C) Semiconductor Group 6 |
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